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    Passivation of substrates with hydrogen to reduce the number of electron traps in the buffer layer at the contact of silicon with Ba1-xSrxTiO3

    Passivation of substrates with hydrogen to reduce the number of electron traps in the buffer layer at the contact of silicon with Ba1-xSrxTiO3 by Dmitry A. Belorusov, Evgeniy I. Goldman, Galina V. Chucheva, Mikhail S. Afanasyev, Vladimir A. Pilipenko, Alina V. Semchenko

    Published 2024-12-01
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