Hongxing Jiang
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The single-chip high-voltage DC/AC LEDs via on-chip integration of mini- and MicroLED arrays developed by their team in 2002 have been widely commercialized for general solid-state lighting and automobile headlights.
Under the support of DARPA-MTO’s SUVOS, CMUVT, DUVAP, and VIGIL programs, their research team has contributed to the early developments of III-nitride deep UV emitters and detectors and InGaN energy devices in the United States. These include the development of the first deep UV picosecond time-resolved optical spectroscopy system (down to 195 nm) for characterizing ultrawide bandgap (UWBG) semiconductor materials, the first prediction and confirmation that Al-rich AlGaN deep UV emitters emit light in the transverse-magnetic (TM) mode, the demonstration of the first UV/blue photonic crystal LED (PC-LED), and AlN deep UV avalanche detectors with an ultrahigh specific detectivity. His team was also one of the first to determine the Mg acceptor energy level in AlN optically and electrically and to demonstrate the conductivity control in Al-rich AlGaN. Supported by ARPA-E, their research team has developed crystal growth technologies for producing thick epitaxial films (or quasi-bulk crystals) of hexagonal boron nitride (h-BN) UWBG semiconductor in large wafer sizes and realized h-BN thermal neutron detectors with a record high detection efficiency.
While in graduate school at Syracuse University (SU), Hongxing Jiang and Jingyu Lin developed the first analytical formalism based on Newtonian gravitational force to describe the orbit of a star moving into and out of a galaxy and predicated the phenomenon of mass precession. This effect has been used by astrophysicists to constrain the abundance of dark matter in the solar system and the Galactic Centre. Provided by Wikipedia