Jingyu Lin

Jingyu Lin () is a Chinese-American physicist and engineer working in the field of wide bandgap semiconductors and photonic devices. She is a co-inventor of MicroLED. In 2000, the husband-wife research team led by Hongxing Jiang and Jingyu Lin at Kansas State University (KSU) proposed and realized the operation of the first MicroLED and passive driving MicroLED microdisplay. In 2009, their team and colleagues at III-N Technology, Inc. and Texas Tech University (TTU) realized and patented the first active driving MicroLED microdisplay in VGA format by heterogeneously integrating MicroLED array with Si CMOS active-matrix driver.

The single-chip high-voltage DC/AC LEDs via on-chip integration of mini- and MicroLED arrays developed by their team in 2002 have been widely commercialized for general solid-state lighting and automobile headlights.

Under the support of DARPA-MTO’s SUVOS, CMUVT, DUVAP, and VIGIL programs, their research team contributed to the early developments of III-nitride deep UV emitters and detectors and InGaN energy devices in the United States. These include the prediction and confirmation that Al-rich AlGaN deep UV emitters emit light in the transverse-magnetic (TM) mode, the demonstration of the first UV and blue photonic crystal LEDs (PC-LEDs), one of the first to demonstrate conductivity control in Al-rich AlGaN and AlN deep UV avalanche photodetectors with an ultrahigh specific detectivity. Supported by ARPA-E, their research team has developed crystal growth technologies for producing thick epitaxial films (or quasi-bulk crystals) of hexagonal boron nitride (h-BN) ultrawide bandgap semiconductor in large wafer sizes and realized h-BN thermal neutron detectors with a record high detection efficiency. Provided by Wikipedia