A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and a laterally doped pocket for a very low bandgap line-TFET. Numerical...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Dalat University
2024-09-01
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| Series: | Tạp chí Khoa học Đại học Đà Lạt |
| Subjects: | |
| Online Access: | https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313 |
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