Reduction of absorption of Ta2O5 monolayers through the suppression of structural defects by employing an appropriate ionic oxygen concentration
Abstract Ultralow-absorption laser films have critical applications in high-power continuous-laser and gravitational-wave-detection systems. During film deposition, the ionic oxygen concentration significantly affects the absorption loss of the film. In this study, Ta2O5 monolayers were deposited us...
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Nature Portfolio
2025-02-01
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Online Access: | https://doi.org/10.1038/s41598-025-86151-3 |
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author | Lin Wang Weili Zhang Ruijin Hong Kun Wang Menglei Wang Qinmin Wang Kui Yi Jianda Shao |
author_facet | Lin Wang Weili Zhang Ruijin Hong Kun Wang Menglei Wang Qinmin Wang Kui Yi Jianda Shao |
author_sort | Lin Wang |
collection | DOAJ |
description | Abstract Ultralow-absorption laser films have critical applications in high-power continuous-laser and gravitational-wave-detection systems. During film deposition, the ionic oxygen concentration significantly affects the absorption loss of the film. In this study, Ta2O5 monolayers were deposited using an ion-assisted electron beam evaporation technique, and the weak absorption at 1064 nm, temperature rise, optical band gap, element content, and binding energy were tested and analyzed. The band structure and microdefects of the Ta2O5 films were characterized, and their correlation with the absorption properties was established. The analyses revealed that the primary mechanism responsible for reducing the absorption loss in Ta2O5 films was an appropriate ionic oxygen concentration, which improved the optical band gap and stoichiometric ratio and reduced oxygen vacancy defects. For Ta2O5 monolayers deposited with the optimal ionic oxygen concentration, the weak absorption was approximately 7.2 ppm and the temperature rise was approximately 0.6 °C, 1/4 and 1/3 of the values of those deposited with an excessive concentration, respectively—an important finding in the preparation of ultralow-absorption laser films. |
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institution | Kabale University |
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language | English |
publishDate | 2025-02-01 |
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spelling | doaj-art-5ee5a8d1e86e41c6bec3cc93502e6f7d2025-02-09T12:34:29ZengNature PortfolioScientific Reports2045-23222025-02-0115111310.1038/s41598-025-86151-3Reduction of absorption of Ta2O5 monolayers through the suppression of structural defects by employing an appropriate ionic oxygen concentrationLin Wang0Weili Zhang1Ruijin Hong2Kun Wang3Menglei Wang4Qinmin Wang5Kui Yi6Jianda Shao7Engineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and TechnologyLaboratory of Thin Film Optics, Shanghai Institute of Optics and Fine MechanicsEngineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and TechnologyLaboratory of Thin Film Optics, Shanghai Institute of Optics and Fine MechanicsLaboratory of Thin Film Optics, Shanghai Institute of Optics and Fine MechanicsLaboratory of Thin Film Optics, Shanghai Institute of Optics and Fine MechanicsLaboratory of Thin Film Optics, Shanghai Institute of Optics and Fine MechanicsLaboratory of Thin Film Optics, Shanghai Institute of Optics and Fine MechanicsAbstract Ultralow-absorption laser films have critical applications in high-power continuous-laser and gravitational-wave-detection systems. During film deposition, the ionic oxygen concentration significantly affects the absorption loss of the film. In this study, Ta2O5 monolayers were deposited using an ion-assisted electron beam evaporation technique, and the weak absorption at 1064 nm, temperature rise, optical band gap, element content, and binding energy were tested and analyzed. The band structure and microdefects of the Ta2O5 films were characterized, and their correlation with the absorption properties was established. The analyses revealed that the primary mechanism responsible for reducing the absorption loss in Ta2O5 films was an appropriate ionic oxygen concentration, which improved the optical band gap and stoichiometric ratio and reduced oxygen vacancy defects. For Ta2O5 monolayers deposited with the optimal ionic oxygen concentration, the weak absorption was approximately 7.2 ppm and the temperature rise was approximately 0.6 °C, 1/4 and 1/3 of the values of those deposited with an excessive concentration, respectively—an important finding in the preparation of ultralow-absorption laser films.https://doi.org/10.1038/s41598-025-86151-3Ion-assisted deposition (IAD)Ta2O5 filmsAbsorption lossIonic oxygen concentration |
spellingShingle | Lin Wang Weili Zhang Ruijin Hong Kun Wang Menglei Wang Qinmin Wang Kui Yi Jianda Shao Reduction of absorption of Ta2O5 monolayers through the suppression of structural defects by employing an appropriate ionic oxygen concentration Scientific Reports Ion-assisted deposition (IAD) Ta2O5 films Absorption loss Ionic oxygen concentration |
title | Reduction of absorption of Ta2O5 monolayers through the suppression of structural defects by employing an appropriate ionic oxygen concentration |
title_full | Reduction of absorption of Ta2O5 monolayers through the suppression of structural defects by employing an appropriate ionic oxygen concentration |
title_fullStr | Reduction of absorption of Ta2O5 monolayers through the suppression of structural defects by employing an appropriate ionic oxygen concentration |
title_full_unstemmed | Reduction of absorption of Ta2O5 monolayers through the suppression of structural defects by employing an appropriate ionic oxygen concentration |
title_short | Reduction of absorption of Ta2O5 monolayers through the suppression of structural defects by employing an appropriate ionic oxygen concentration |
title_sort | reduction of absorption of ta2o5 monolayers through the suppression of structural defects by employing an appropriate ionic oxygen concentration |
topic | Ion-assisted deposition (IAD) Ta2O5 films Absorption loss Ionic oxygen concentration |
url | https://doi.org/10.1038/s41598-025-86151-3 |
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