Selective phase growth of ultra-smooth Ti2O3 and TiO2 thin films at low growth temperature controlled by the oxygen partial pressure
The selective phase growth of Ti-based oxide thin films on sapphire substrates is crucial in controlling the electronic properties, such as the insulator-to-metal transition (IMT). Thin films are generally prepared by pulsed laser deposition under high temperatures, but it is challenging to obtain a...
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
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| Series: | Applied Surface Science Advances |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666523925000157 |
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| Summary: | The selective phase growth of Ti-based oxide thin films on sapphire substrates is crucial in controlling the electronic properties, such as the insulator-to-metal transition (IMT). Thin films are generally prepared by pulsed laser deposition under high temperatures, but it is challenging to obtain a smooth surface. In this study, we deposited ultra-smooth epitaxial TiO2 and Ti2O3 thin films with roughnesses below 0.34 Å on sapphire substrates. By controlling the oxygen partial pressure at a relatively low temperature, at 473 K, we obtained highly crystalline thin films with selective growth. The thin films grown at 1 and 10−3 Pa exhibited a rutile-type TiO2 phase, and those grown at 10−6 Pa exhibited a hexagonal Ti2O3 phase. The crystal structures and electronic structures were consistent with the previous reports on TiO2 and Ti2O3 thin films. Moreover, Ti2O3 underwent an IMT, whereas TiO2 was unchanged. |
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| ISSN: | 2666-5239 |