Selective phase growth of ultra-smooth Ti2O3 and TiO2 thin films at low growth temperature controlled by the oxygen partial pressure
The selective phase growth of Ti-based oxide thin films on sapphire substrates is crucial in controlling the electronic properties, such as the insulator-to-metal transition (IMT). Thin films are generally prepared by pulsed laser deposition under high temperatures, but it is challenging to obtain a...
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| Format: | Article |
| Language: | English |
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Elsevier
2025-03-01
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| Series: | Applied Surface Science Advances |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666523925000157 |
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| author | Jiayi Tang Okkyun Seo Jaemyung Kim Ibrahima Gueye L.S.R. Kumara Ho Jun Oh Wan-Gil Jung Won-Jin Moon Yong Tae Kim Satoshi Yasuno Tappei Nishihara Akifumi Matsuda Osami Sakata |
| author_facet | Jiayi Tang Okkyun Seo Jaemyung Kim Ibrahima Gueye L.S.R. Kumara Ho Jun Oh Wan-Gil Jung Won-Jin Moon Yong Tae Kim Satoshi Yasuno Tappei Nishihara Akifumi Matsuda Osami Sakata |
| author_sort | Jiayi Tang |
| collection | DOAJ |
| description | The selective phase growth of Ti-based oxide thin films on sapphire substrates is crucial in controlling the electronic properties, such as the insulator-to-metal transition (IMT). Thin films are generally prepared by pulsed laser deposition under high temperatures, but it is challenging to obtain a smooth surface. In this study, we deposited ultra-smooth epitaxial TiO2 and Ti2O3 thin films with roughnesses below 0.34 Å on sapphire substrates. By controlling the oxygen partial pressure at a relatively low temperature, at 473 K, we obtained highly crystalline thin films with selective growth. The thin films grown at 1 and 10−3 Pa exhibited a rutile-type TiO2 phase, and those grown at 10−6 Pa exhibited a hexagonal Ti2O3 phase. The crystal structures and electronic structures were consistent with the previous reports on TiO2 and Ti2O3 thin films. Moreover, Ti2O3 underwent an IMT, whereas TiO2 was unchanged. |
| format | Article |
| id | doaj-art-6ac8bc3e834e4a40afde36642191485d |
| institution | Kabale University |
| issn | 2666-5239 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Applied Surface Science Advances |
| spelling | doaj-art-6ac8bc3e834e4a40afde36642191485d2025-02-09T05:01:31ZengElsevierApplied Surface Science Advances2666-52392025-03-0126100706Selective phase growth of ultra-smooth Ti2O3 and TiO2 thin films at low growth temperature controlled by the oxygen partial pressureJiayi Tang0Okkyun Seo1Jaemyung Kim2Ibrahima Gueye3L.S.R. Kumara4Ho Jun Oh5Wan-Gil Jung6Won-Jin Moon7Yong Tae Kim8Satoshi Yasuno9Tappei Nishihara10Akifumi Matsuda11Osami Sakata12Center for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, JapanCenter for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan; Corresponding author.RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo, Hyogo 679-5148, JapanCenter for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, JapanCenter for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, JapanDepartment of Physics and Photon Science, Gwangju Institute of Science and Technology, 123, Cheomdangwagi-ro, Gwangju 61005, Republic of KoreaKorea Basic Science Institute, Gwangju Center, 77 Yongbong-ro, Buk-gu, Gwangju, 61186, Republic of KoreaKorea Basic Science Institute, Gwangju Center, 77 Yongbong-ro, Buk-gu, Gwangju, 61186, Republic of KoreaDepartment of Chemical Engineering & Biotechnology, Tech University of Korea, Siheung-Si, 15073, Republic of KoreaCenter for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, JapanCenter for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, JapanDepartment of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259-J3-16, Nagatsuta, Midori, Yokohama 226-8502, JapanCenter for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan; Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259-J3-16, Nagatsuta, Midori, Yokohama 226-8502, Japan; Corresponding author at: Center for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan.The selective phase growth of Ti-based oxide thin films on sapphire substrates is crucial in controlling the electronic properties, such as the insulator-to-metal transition (IMT). Thin films are generally prepared by pulsed laser deposition under high temperatures, but it is challenging to obtain a smooth surface. In this study, we deposited ultra-smooth epitaxial TiO2 and Ti2O3 thin films with roughnesses below 0.34 Å on sapphire substrates. By controlling the oxygen partial pressure at a relatively low temperature, at 473 K, we obtained highly crystalline thin films with selective growth. The thin films grown at 1 and 10−3 Pa exhibited a rutile-type TiO2 phase, and those grown at 10−6 Pa exhibited a hexagonal Ti2O3 phase. The crystal structures and electronic structures were consistent with the previous reports on TiO2 and Ti2O3 thin films. Moreover, Ti2O3 underwent an IMT, whereas TiO2 was unchanged.http://www.sciencedirect.com/science/article/pii/S2666523925000157Epitaxial thin filmsCrystal structureElectronic structureOxygen partial pressureInsulator-to-metal transition |
| spellingShingle | Jiayi Tang Okkyun Seo Jaemyung Kim Ibrahima Gueye L.S.R. Kumara Ho Jun Oh Wan-Gil Jung Won-Jin Moon Yong Tae Kim Satoshi Yasuno Tappei Nishihara Akifumi Matsuda Osami Sakata Selective phase growth of ultra-smooth Ti2O3 and TiO2 thin films at low growth temperature controlled by the oxygen partial pressure Applied Surface Science Advances Epitaxial thin films Crystal structure Electronic structure Oxygen partial pressure Insulator-to-metal transition |
| title | Selective phase growth of ultra-smooth Ti2O3 and TiO2 thin films at low growth temperature controlled by the oxygen partial pressure |
| title_full | Selective phase growth of ultra-smooth Ti2O3 and TiO2 thin films at low growth temperature controlled by the oxygen partial pressure |
| title_fullStr | Selective phase growth of ultra-smooth Ti2O3 and TiO2 thin films at low growth temperature controlled by the oxygen partial pressure |
| title_full_unstemmed | Selective phase growth of ultra-smooth Ti2O3 and TiO2 thin films at low growth temperature controlled by the oxygen partial pressure |
| title_short | Selective phase growth of ultra-smooth Ti2O3 and TiO2 thin films at low growth temperature controlled by the oxygen partial pressure |
| title_sort | selective phase growth of ultra smooth ti2o3 and tio2 thin films at low growth temperature controlled by the oxygen partial pressure |
| topic | Epitaxial thin films Crystal structure Electronic structure Oxygen partial pressure Insulator-to-metal transition |
| url | http://www.sciencedirect.com/science/article/pii/S2666523925000157 |
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