RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS
In this study, we use a tight binding model to investigate structural and electronic changes in zigzag-buckled silicene nanoribbons (ZBSiNRs) with two vacancies at different positions. We divide the defects into two categories based on a difference in geometric properties. The results show that the...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Dalat University
2024-03-01
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| Series: | Tạp chí Khoa học Đại học Đà Lạt |
| Subjects: | |
| Online Access: | https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1232 |
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| Summary: | In this study, we use a tight binding model to investigate structural and electronic changes in zigzag-buckled silicene nanoribbons (ZBSiNRs) with two vacancies at different positions. We divide the defects into two categories based on a difference in geometric properties. The results show that the first- and second-order interaction parameters of two atoms of the same type play an important role in the electronic properties of this material. Vacancies near the edge have a stronger effect than those near the center of the ribbons. We further show that each type of divacancy will give a different result under the influence of a perpendicular electric field. This is a favorable condition for controlling the conductive state of materials in future applications in the semiconductor and thermoelectric industries.
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| ISSN: | 0866-787X |