Ring Defects Associated with Boron–Oxygen‐Related Degradation in p‐Type Silicon Heterojunction Solar Cells

Ring Defects Associated with Boron–Oxygen‐Related Degradation in p‐Type Silicon Heterojunction Solar Cells

Silicon heterojunction (SHJ) cell architectures, which have dominated silicon single‐junction efficiency records for the past 10 years, are processed at relatively low temperatures, on the order of ≈250 °C. Recombination‐active oxygen complexes in crystalline silicon, formed from interstitial oxygen...

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Bibliographic Details
Main Authors: Bruno Vicari Stefani, Moonyong Kim, Matthew Wright, Anastasia Soeriyadi, Ilya Nyapshaev, Konstantin Emtsev, Brett Hallam
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Energy & Sustainability Research
Subjects:
boron
heterojunctions
oxygen
p‐types
silicon
Online Access:https://doi.org/10.1002/aesr.202400255
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