Critical band-to-band-tunnelling based optoelectronic memory
Abstract Neuromorphic vision hardware, embedded with multiple functions, has recently emerged as a potent platform for machine vision. To realize memory in sensor functions, reconfigurable and non-volatile manipulation of photocarriers is highly desirable. However, previous technologies bear mechani...
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| Format: | Article |
| Language: | English |
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Nature Publishing Group
2025-02-01
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| Series: | Light: Science & Applications |
| Online Access: | https://doi.org/10.1038/s41377-025-01756-7 |
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| _version_ | 1823861584412278784 |
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| author | Hangyu Xu Runzhang Xie Jinshui Miao Zhenhan Zhang Haonan Ge Xuming Shi Min Luo Jinjin Wang Tangxin Li Xiao Fu Johnny C. Ho Peng Zhou Fang Wang Weida Hu |
| author_facet | Hangyu Xu Runzhang Xie Jinshui Miao Zhenhan Zhang Haonan Ge Xuming Shi Min Luo Jinjin Wang Tangxin Li Xiao Fu Johnny C. Ho Peng Zhou Fang Wang Weida Hu |
| author_sort | Hangyu Xu |
| collection | DOAJ |
| description | Abstract Neuromorphic vision hardware, embedded with multiple functions, has recently emerged as a potent platform for machine vision. To realize memory in sensor functions, reconfigurable and non-volatile manipulation of photocarriers is highly desirable. However, previous technologies bear mechanism challenges, such as the ambiguous optoelectronic memory mechanism and high potential barrier, resulting in a limited response speed and a high operating voltage. Here, for the first time, we propose a critical band-to-band tunnelling (BTBT) based device that combines sensing, integration and memory functions. The nearly infinitesimal barrier facilitates the tunnelling process, resulting in a broadband application range (940 nm). Furthermore, the observation of dual negative differential resistance (NDR) points confirms that the critical BTBT of photocarriers contributes to the sub-microsecond photomemory speed. Since the photomemory speed, with no motion blur, is important for motion detection, the critical BTBT memory is expected to enable moving target tracking and recognition, underscoring its superiority in intelligent perception. |
| format | Article |
| id | doaj-art-ab4e8766ba494ecfa111c6feaabdaee8 |
| institution | Kabale University |
| issn | 2047-7538 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Nature Publishing Group |
| record_format | Article |
| series | Light: Science & Applications |
| spelling | doaj-art-ab4e8766ba494ecfa111c6feaabdaee82025-02-09T12:54:57ZengNature Publishing GroupLight: Science & Applications2047-75382025-02-0114111010.1038/s41377-025-01756-7Critical band-to-band-tunnelling based optoelectronic memoryHangyu Xu0Runzhang Xie1Jinshui Miao2Zhenhan Zhang3Haonan Ge4Xuming Shi5Min Luo6Jinjin Wang7Tangxin Li8Xiao Fu9Johnny C. Ho10Peng Zhou11Fang Wang12Weida Hu13State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesShanghai Research Institute for Intelligent Autonomous Systems, Tongji UniversityState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesDepartment of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter waves, City University of Hong KongASIC & System State Key Laboratory, School of Microelectronics, Fudan UniversityState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesAbstract Neuromorphic vision hardware, embedded with multiple functions, has recently emerged as a potent platform for machine vision. To realize memory in sensor functions, reconfigurable and non-volatile manipulation of photocarriers is highly desirable. However, previous technologies bear mechanism challenges, such as the ambiguous optoelectronic memory mechanism and high potential barrier, resulting in a limited response speed and a high operating voltage. Here, for the first time, we propose a critical band-to-band tunnelling (BTBT) based device that combines sensing, integration and memory functions. The nearly infinitesimal barrier facilitates the tunnelling process, resulting in a broadband application range (940 nm). Furthermore, the observation of dual negative differential resistance (NDR) points confirms that the critical BTBT of photocarriers contributes to the sub-microsecond photomemory speed. Since the photomemory speed, with no motion blur, is important for motion detection, the critical BTBT memory is expected to enable moving target tracking and recognition, underscoring its superiority in intelligent perception.https://doi.org/10.1038/s41377-025-01756-7 |
| spellingShingle | Hangyu Xu Runzhang Xie Jinshui Miao Zhenhan Zhang Haonan Ge Xuming Shi Min Luo Jinjin Wang Tangxin Li Xiao Fu Johnny C. Ho Peng Zhou Fang Wang Weida Hu Critical band-to-band-tunnelling based optoelectronic memory Light: Science & Applications |
| title | Critical band-to-band-tunnelling based optoelectronic memory |
| title_full | Critical band-to-band-tunnelling based optoelectronic memory |
| title_fullStr | Critical band-to-band-tunnelling based optoelectronic memory |
| title_full_unstemmed | Critical band-to-band-tunnelling based optoelectronic memory |
| title_short | Critical band-to-band-tunnelling based optoelectronic memory |
| title_sort | critical band to band tunnelling based optoelectronic memory |
| url | https://doi.org/10.1038/s41377-025-01756-7 |
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