Tailoring the Anomalous Hall Effect in van der Waals Ferromagnet Fe3GeTe2
[Purposes] The intrinsic magnetic moments of magnetic materials can lead to anomalous Hall effects, and the Hall resistance can be significantly reduced, thus improving the heat loss in micro- and nanoelectronic devices. Two-dimensional van der Waals magnetic materials have shown fascinating natural...
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Editorial Office of Journal of Taiyuan University of Technology
2025-01-01
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Online Access: | https://tyutjournal.tyut.edu.cn/englishpaper/show-2370.html |
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author | WU Kaile WANG Junshan JIANG Jiaolin CHAI Qian WANG Qin SANG Shengbo GE Yang |
author_facet | WU Kaile WANG Junshan JIANG Jiaolin CHAI Qian WANG Qin SANG Shengbo GE Yang |
author_sort | WU Kaile |
collection | DOAJ |
description | [Purposes] The intrinsic magnetic moments of magnetic materials can lead to anomalous Hall effects, and the Hall resistance can be significantly reduced, thus improving the heat loss in micro- and nanoelectronic devices. Two-dimensional van der Waals magnetic materials have shown fascinating natural ferromagnetic properties at the atomic level, which has great potential in the fields of low power spintronics, quantum computing, and optical communication. [Methods] Herein, the ferromagnetism and magnetic anisotropy of bulk Fe3GeTe2 (FGT) were investigated. In addition, the anomalous Hall effect of FGT nanoflakes was studied at various temperatures and thicknesses by standard Hall bar device in detail. [Findings] The results indicate that a pronounced vertical magnetic anisotropy exists below the Curie temperature (Tc=165 K) of FGT. There is an anomalous Hall resistance of 0.764 Ω at 20 K at zero magnetic field, and it decreases to 0.332 Ω at 140 K, which proves that FGT has an anomalous Hall effect regulated with temperature. The hysteresis loop gradually changes from nearly rectangular shape to flat diamond shape, indicating that the magnetization direction of FGT has changed from out-of-plane to in-plane, which further verifies that FGT has intrinsic out-of-plane magnetic anisotropy. Furthermore, the carrier concentration (2.5×1022 cm-3 at 20 K) and mobility (13.3 cm2/(V·s) at 20 K) under large magnetic field (−6 T~6 T) are calculated. |
format | Article |
id | doaj-art-c31d4b5956024e388e3e5d7bc373f84f |
institution | Kabale University |
issn | 1007-9432 |
language | English |
publishDate | 2025-01-01 |
publisher | Editorial Office of Journal of Taiyuan University of Technology |
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series | Taiyuan Ligong Daxue xuebao |
spelling | doaj-art-c31d4b5956024e388e3e5d7bc373f84f2025-02-12T03:34:22ZengEditorial Office of Journal of Taiyuan University of TechnologyTaiyuan Ligong Daxue xuebao1007-94322025-01-0156110611310.16355/j.tyut.1007-9432.202401131007-9432(2025)01-0106-08Tailoring the Anomalous Hall Effect in van der Waals Ferromagnet Fe3GeTe2WU Kaile0WANG Junshan1JIANG Jiaolin2CHAI Qian3WANG Qin4SANG Shengbo5GE Yang6Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan, Shanxi, ChinaShanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan, Shanxi, ChinaShanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan, Shanxi, ChinaShanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan, Shanxi, ChinaInstitute of Energy Innovation (IEI), College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi, ChinaShanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan, Shanxi, ChinaShanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan, Shanxi, China[Purposes] The intrinsic magnetic moments of magnetic materials can lead to anomalous Hall effects, and the Hall resistance can be significantly reduced, thus improving the heat loss in micro- and nanoelectronic devices. Two-dimensional van der Waals magnetic materials have shown fascinating natural ferromagnetic properties at the atomic level, which has great potential in the fields of low power spintronics, quantum computing, and optical communication. [Methods] Herein, the ferromagnetism and magnetic anisotropy of bulk Fe3GeTe2 (FGT) were investigated. In addition, the anomalous Hall effect of FGT nanoflakes was studied at various temperatures and thicknesses by standard Hall bar device in detail. [Findings] The results indicate that a pronounced vertical magnetic anisotropy exists below the Curie temperature (Tc=165 K) of FGT. There is an anomalous Hall resistance of 0.764 Ω at 20 K at zero magnetic field, and it decreases to 0.332 Ω at 140 K, which proves that FGT has an anomalous Hall effect regulated with temperature. The hysteresis loop gradually changes from nearly rectangular shape to flat diamond shape, indicating that the magnetization direction of FGT has changed from out-of-plane to in-plane, which further verifies that FGT has intrinsic out-of-plane magnetic anisotropy. Furthermore, the carrier concentration (2.5×1022 cm-3 at 20 K) and mobility (13.3 cm2/(V·s) at 20 K) under large magnetic field (−6 T~6 T) are calculated.https://tyutjournal.tyut.edu.cn/englishpaper/show-2370.htmlvan der waals ferromagnetsfe3gete2magnetic anisotropyanomalous hall effectmagnetic hysteresis loop |
spellingShingle | WU Kaile WANG Junshan JIANG Jiaolin CHAI Qian WANG Qin SANG Shengbo GE Yang Tailoring the Anomalous Hall Effect in van der Waals Ferromagnet Fe3GeTe2 Taiyuan Ligong Daxue xuebao van der waals ferromagnets fe3gete2 magnetic anisotropy anomalous hall effect magnetic hysteresis loop |
title | Tailoring the Anomalous Hall Effect in van der Waals Ferromagnet Fe3GeTe2 |
title_full | Tailoring the Anomalous Hall Effect in van der Waals Ferromagnet Fe3GeTe2 |
title_fullStr | Tailoring the Anomalous Hall Effect in van der Waals Ferromagnet Fe3GeTe2 |
title_full_unstemmed | Tailoring the Anomalous Hall Effect in van der Waals Ferromagnet Fe3GeTe2 |
title_short | Tailoring the Anomalous Hall Effect in van der Waals Ferromagnet Fe3GeTe2 |
title_sort | tailoring the anomalous hall effect in van der waals ferromagnet fe3gete2 |
topic | van der waals ferromagnets fe3gete2 magnetic anisotropy anomalous hall effect magnetic hysteresis loop |
url | https://tyutjournal.tyut.edu.cn/englishpaper/show-2370.html |
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