Effects of defect locations and loading voltages on breakdown of GIL tri-post insulators
The tri-post insulator is a critical component in Gas Insulated Transmission Lines (GIL). However, breakdown incidents involving tri-post insulators are frequent, posing risks to the safety and reliability of GIL systems. This paper investigates the effects of defect locations and loading voltages o...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
|
| Series: | Results in Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590123025003135 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1825206903774380032 |
|---|---|
| author | Zhijun Guo Boxue Du Zehua Wang Yun Chen Jianan Dong Hucheng Liang |
| author_facet | Zhijun Guo Boxue Du Zehua Wang Yun Chen Jianan Dong Hucheng Liang |
| author_sort | Zhijun Guo |
| collection | DOAJ |
| description | The tri-post insulator is a critical component in Gas Insulated Transmission Lines (GIL). However, breakdown incidents involving tri-post insulators are frequent, posing risks to the safety and reliability of GIL systems. This paper investigates the effects of defect locations and loading voltages on the progression of damage channels in tri-post insulators through both experimental and simulation methods. Results show that the development of damage channels in insulators is influenced by electric field lines. Specifically, when the defect is located on the ground (GND) side of the insulator, the damage channel converges toward the center axis of the post. Conversely, when the defect is on the high-voltage (HV) side in the belly, the damage channel is divided into three segments: “internal-surface-internal.” The progression speed of the damage channel is influenced by the electric field strength at its front end, leading to shorter breakdown time and more side branches as the channel develops. When the defect is on the HV side, the breakdown duration is longer than when it is on the GND side. Additionally, loading voltage also affects the development of damage channels, resulting in varying breakdown morphologies within insulators. The findings of this study provide valuable insights for identifying the origins of breakdown faults and optimizing the design of GIL insulators. |
| format | Article |
| id | doaj-art-ccd9109c217f4248bbd1a68f309ae032 |
| institution | Kabale University |
| issn | 2590-1230 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Engineering |
| spelling | doaj-art-ccd9109c217f4248bbd1a68f309ae0322025-02-07T04:48:12ZengElsevierResults in Engineering2590-12302025-03-0125104227Effects of defect locations and loading voltages on breakdown of GIL tri-post insulatorsZhijun Guo0Boxue Du1Zehua Wang2Yun Chen3Jianan Dong4Hucheng Liang5School of Electrical and Information Engineering, Tianjin University, Tianjin 300072, ChinaSchool of Electrical and Information Engineering, Tianjin University, Tianjin 300072, ChinaState Grid Tianjin Power Chengnan Power Supply Branch, Tianjin 300201, ChinaChina Electric Power Research Institute, Beijing 100192, ChinaSchool of Electrical and Information Engineering, Tianjin University, Tianjin 300072, ChinaSchool of Electrical and Information Engineering, Tianjin University, Tianjin 300072, China; Corresponding author.The tri-post insulator is a critical component in Gas Insulated Transmission Lines (GIL). However, breakdown incidents involving tri-post insulators are frequent, posing risks to the safety and reliability of GIL systems. This paper investigates the effects of defect locations and loading voltages on the progression of damage channels in tri-post insulators through both experimental and simulation methods. Results show that the development of damage channels in insulators is influenced by electric field lines. Specifically, when the defect is located on the ground (GND) side of the insulator, the damage channel converges toward the center axis of the post. Conversely, when the defect is on the high-voltage (HV) side in the belly, the damage channel is divided into three segments: “internal-surface-internal.” The progression speed of the damage channel is influenced by the electric field strength at its front end, leading to shorter breakdown time and more side branches as the channel develops. When the defect is on the HV side, the breakdown duration is longer than when it is on the GND side. Additionally, loading voltage also affects the development of damage channels, resulting in varying breakdown morphologies within insulators. The findings of this study provide valuable insights for identifying the origins of breakdown faults and optimizing the design of GIL insulators.http://www.sciencedirect.com/science/article/pii/S2590123025003135GilTri-post insulatorDefect locationLoading voltageBreakdown morphology |
| spellingShingle | Zhijun Guo Boxue Du Zehua Wang Yun Chen Jianan Dong Hucheng Liang Effects of defect locations and loading voltages on breakdown of GIL tri-post insulators Results in Engineering Gil Tri-post insulator Defect location Loading voltage Breakdown morphology |
| title | Effects of defect locations and loading voltages on breakdown of GIL tri-post insulators |
| title_full | Effects of defect locations and loading voltages on breakdown of GIL tri-post insulators |
| title_fullStr | Effects of defect locations and loading voltages on breakdown of GIL tri-post insulators |
| title_full_unstemmed | Effects of defect locations and loading voltages on breakdown of GIL tri-post insulators |
| title_short | Effects of defect locations and loading voltages on breakdown of GIL tri-post insulators |
| title_sort | effects of defect locations and loading voltages on breakdown of gil tri post insulators |
| topic | Gil Tri-post insulator Defect location Loading voltage Breakdown morphology |
| url | http://www.sciencedirect.com/science/article/pii/S2590123025003135 |
| work_keys_str_mv | AT zhijunguo effectsofdefectlocationsandloadingvoltagesonbreakdownofgiltripostinsulators AT boxuedu effectsofdefectlocationsandloadingvoltagesonbreakdownofgiltripostinsulators AT zehuawang effectsofdefectlocationsandloadingvoltagesonbreakdownofgiltripostinsulators AT yunchen effectsofdefectlocationsandloadingvoltagesonbreakdownofgiltripostinsulators AT jianandong effectsofdefectlocationsandloadingvoltagesonbreakdownofgiltripostinsulators AT huchengliang effectsofdefectlocationsandloadingvoltagesonbreakdownofgiltripostinsulators |