THEORETICAL STUDIES ON THE MAGNETIC, ELECTRICAL, AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC Ba(Zr\(_{0.2}\)Ti\(_{0.8}\)O\(_3\))  MATERIALS WITH MANGANESE DOPING

In this study, we conducted a density functional theory investigation of the structural, electronic, magnetic, and optical properties of manganese-doped lead-free ferroelectric Ba(Zr0.2Ti0.8)O3 (BZT) materials. The electronic structure calculations revealed that pristine BZT material behaves as a p...

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Main Authors: Tien Lam Vu, Hoang Thoan Nguyen, Huu Lam Nguyen, Ngoc Trung Nguyen, Quoc Van Duong, Duc Dung Dang
Format: Article
Language:English
Published: Dalat University 2024-09-01
Series:Tạp chí Khoa học Đại học Đà Lạt
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Online Access:https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1274
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author Tien Lam Vu
Hoang Thoan Nguyen
Huu Lam Nguyen
Ngoc Trung Nguyen
Quoc Van Duong
Duc Dung Dang
author_facet Tien Lam Vu
Hoang Thoan Nguyen
Huu Lam Nguyen
Ngoc Trung Nguyen
Quoc Van Duong
Duc Dung Dang
author_sort Tien Lam Vu
collection DOAJ
description In this study, we conducted a density functional theory investigation of the structural, electronic, magnetic, and optical properties of manganese-doped lead-free ferroelectric Ba(Zr0.2Ti0.8)O3 (BZT) materials. The electronic structure calculations revealed that pristine BZT material behaves as a p-type semiconductor with direct and indirect bandgaps of 3.18 eV and 2.08 eV, respectively. Upon Mn doping, the bandgap values converge to zero, indicating a transition from semiconductor to metal behavior. Additionally, the asymmetrical spin-polarized density of states and significant magnetic moments, determined through Mulliken population analysis, suggest the induction of magnetism in the BZT material due to Mn doping. Magnetic moments of 0.98 µB/f.u., 0.57 µB/f.u., and 0.87 µB/f.u. were observed when Mn substitutes into Ba, Ti, and interstitial sites, respectively. Furthermore, we observed substantial enhancements in dielectric constants and changes in other properties such as refractive index, loss function, and reflectivity upon Mn doping, suggesting alterations in the optoelectronic properties of the materials. Our findings contribute to the understanding of transition metal-doped lead-free ferroelectric BZT materials and provide more information for the development of future smart electronic and optoelectronic devices.
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issn 0866-787X
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series Tạp chí Khoa học Đại học Đà Lạt
spelling doaj-art-d5410f26b5af41ea8c9611eb4417ce732025-02-12T01:00:44ZengDalat UniversityTạp chí Khoa học Đại học Đà Lạt0866-787X2024-09-01143S10.37569/DalatUniversity.14.3S.1274(2024)THEORETICAL STUDIES ON THE MAGNETIC, ELECTRICAL, AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC Ba(Zr\(_{0.2}\)Ti\(_{0.8}\)O\(_3\))  MATERIALS WITH MANGANESE DOPINGTien Lam Vu0https://orcid.org/0000-0002-3211-5916Hoang Thoan Nguyen1https://orcid.org/0000-0002-5613-8514Huu Lam Nguyen2https://orcid.org/0009-0002-7101-6627Ngoc Trung Nguyen3https://orcid.org/0009-0002-3416-9384Quoc Van Duong4https://orcid.org/0000-0003-2928-0037Duc Dung Dang5https://orcid.org/0000-0002-1979-6796Hanoi University of Science and TechnologyHanoi University of Science and TechnologyHanoi University of Science and TechnologyHanoi University of Science and TechnologyHanoi National University of EducationHanoi University of Science and Technology In this study, we conducted a density functional theory investigation of the structural, electronic, magnetic, and optical properties of manganese-doped lead-free ferroelectric Ba(Zr0.2Ti0.8)O3 (BZT) materials. The electronic structure calculations revealed that pristine BZT material behaves as a p-type semiconductor with direct and indirect bandgaps of 3.18 eV and 2.08 eV, respectively. Upon Mn doping, the bandgap values converge to zero, indicating a transition from semiconductor to metal behavior. Additionally, the asymmetrical spin-polarized density of states and significant magnetic moments, determined through Mulliken population analysis, suggest the induction of magnetism in the BZT material due to Mn doping. Magnetic moments of 0.98 µB/f.u., 0.57 µB/f.u., and 0.87 µB/f.u. were observed when Mn substitutes into Ba, Ti, and interstitial sites, respectively. Furthermore, we observed substantial enhancements in dielectric constants and changes in other properties such as refractive index, loss function, and reflectivity upon Mn doping, suggesting alterations in the optoelectronic properties of the materials. Our findings contribute to the understanding of transition metal-doped lead-free ferroelectric BZT materials and provide more information for the development of future smart electronic and optoelectronic devices. https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1274BZTDFTLead-free ferroelectricMagnetismMultiferroic.
spellingShingle Tien Lam Vu
Hoang Thoan Nguyen
Huu Lam Nguyen
Ngoc Trung Nguyen
Quoc Van Duong
Duc Dung Dang
THEORETICAL STUDIES ON THE MAGNETIC, ELECTRICAL, AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC Ba(Zr\(_{0.2}\)Ti\(_{0.8}\)O\(_3\))  MATERIALS WITH MANGANESE DOPING
Tạp chí Khoa học Đại học Đà Lạt
BZT
DFT
Lead-free ferroelectric
Magnetism
Multiferroic.
title THEORETICAL STUDIES ON THE MAGNETIC, ELECTRICAL, AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC Ba(Zr\(_{0.2}\)Ti\(_{0.8}\)O\(_3\))  MATERIALS WITH MANGANESE DOPING
title_full THEORETICAL STUDIES ON THE MAGNETIC, ELECTRICAL, AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC Ba(Zr\(_{0.2}\)Ti\(_{0.8}\)O\(_3\))  MATERIALS WITH MANGANESE DOPING
title_fullStr THEORETICAL STUDIES ON THE MAGNETIC, ELECTRICAL, AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC Ba(Zr\(_{0.2}\)Ti\(_{0.8}\)O\(_3\))  MATERIALS WITH MANGANESE DOPING
title_full_unstemmed THEORETICAL STUDIES ON THE MAGNETIC, ELECTRICAL, AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC Ba(Zr\(_{0.2}\)Ti\(_{0.8}\)O\(_3\))  MATERIALS WITH MANGANESE DOPING
title_short THEORETICAL STUDIES ON THE MAGNETIC, ELECTRICAL, AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC Ba(Zr\(_{0.2}\)Ti\(_{0.8}\)O\(_3\))  MATERIALS WITH MANGANESE DOPING
title_sort theoretical studies on the magnetic electrical and optical properties of lead free ferroelectric ba zr 0 2 ti 0 8 o 3 materials with manganese doping
topic BZT
DFT
Lead-free ferroelectric
Magnetism
Multiferroic.
url https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1274
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