Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision
Abstract Polarization is an important attribute of light and can be artificially modulated as a versatile information carrier. Conventional polarization-sensitive photodetection relies on a combination of polarizing optical elements and standard photodetectors, which requires a substantial amount of...
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Nature Publishing Group
2025-02-01
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Series: | Light: Science & Applications |
Online Access: | https://doi.org/10.1038/s41377-025-01744-x |
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author | Zhilin Liu Mingxiu Liu Liujian Qi Nan Zhang Bin Wang Xiaojuan Sun Rongjun Zhang Dabing Li Shaojuan Li |
author_facet | Zhilin Liu Mingxiu Liu Liujian Qi Nan Zhang Bin Wang Xiaojuan Sun Rongjun Zhang Dabing Li Shaojuan Li |
author_sort | Zhilin Liu |
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description | Abstract Polarization is an important attribute of light and can be artificially modulated as a versatile information carrier. Conventional polarization-sensitive photodetection relies on a combination of polarizing optical elements and standard photodetectors, which requires a substantial amount of space and manufacturing expenses. Although on-chip polarized photodetectors have been realized in recent years based on two-dimensional (2D) materials with low-symmetry crystal structures, they are limited by the intrinsic anisotropic property and thus the optional range of materials, the operation wavelength, and more importantly, the low anisotropic ratio, hindering their practical applications. In this work, we construct a versatile platform that transcends the constraints of material anisotropy, by integrating WSe2-based photodetector with MoS2-based field-effect transistor, delivering high-performance broadband polarization detection capability with orders of magnitude improvement in anisotropic ratio and on/off ratio. The polarization arises from hot electron injection caused by the plasmonic metal electrode and is amplified by the transistor to raise the anisotropic ratio from 2 to an impressive value over 60 in the infrared (IR) band, reaching the level of existing applications. Meanwhile, the system achieves a significant improvement in photosensitivity, with an on/off ratio of over 103 in the IR band. Based on the above performance optimization, we demonstrated its polarization-modulated IR optical communication ability and polarized artificial vision applications with a high image recognition accuracy of ~99%. The proposed platform provides a promising route for the development of the long-sought minimized, high-performance, multifunctional optoelectronic systems. |
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institution | Kabale University |
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language | English |
publishDate | 2025-02-01 |
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spelling | doaj-art-d846571bb49440b29bcc973a1309d2b42025-02-09T12:54:59ZengNature Publishing GroupLight: Science & Applications2047-75382025-02-0114111110.1038/s41377-025-01744-xVersatile on-chip polarization-sensitive detection system for optical communication and artificial visionZhilin Liu0Mingxiu Liu1Liujian Qi2Nan Zhang3Bin Wang4Xiaojuan Sun5Rongjun Zhang6Dabing Li7Shaojuan Li8Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence Science and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of SciencesKey Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence Science and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of SciencesKey Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence Science and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of SciencesKey Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence Science and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of SciencesKey Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence Science and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of SciencesKey Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence Science and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of SciencesDepartment of Optical Science and Engineering, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Proception, Institute of Optoelectronics, Fudan UniversityKey Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence Science and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of SciencesKey Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence Science and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of SciencesAbstract Polarization is an important attribute of light and can be artificially modulated as a versatile information carrier. Conventional polarization-sensitive photodetection relies on a combination of polarizing optical elements and standard photodetectors, which requires a substantial amount of space and manufacturing expenses. Although on-chip polarized photodetectors have been realized in recent years based on two-dimensional (2D) materials with low-symmetry crystal structures, they are limited by the intrinsic anisotropic property and thus the optional range of materials, the operation wavelength, and more importantly, the low anisotropic ratio, hindering their practical applications. In this work, we construct a versatile platform that transcends the constraints of material anisotropy, by integrating WSe2-based photodetector with MoS2-based field-effect transistor, delivering high-performance broadband polarization detection capability with orders of magnitude improvement in anisotropic ratio and on/off ratio. The polarization arises from hot electron injection caused by the plasmonic metal electrode and is amplified by the transistor to raise the anisotropic ratio from 2 to an impressive value over 60 in the infrared (IR) band, reaching the level of existing applications. Meanwhile, the system achieves a significant improvement in photosensitivity, with an on/off ratio of over 103 in the IR band. Based on the above performance optimization, we demonstrated its polarization-modulated IR optical communication ability and polarized artificial vision applications with a high image recognition accuracy of ~99%. The proposed platform provides a promising route for the development of the long-sought minimized, high-performance, multifunctional optoelectronic systems.https://doi.org/10.1038/s41377-025-01744-x |
spellingShingle | Zhilin Liu Mingxiu Liu Liujian Qi Nan Zhang Bin Wang Xiaojuan Sun Rongjun Zhang Dabing Li Shaojuan Li Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision Light: Science & Applications |
title | Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision |
title_full | Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision |
title_fullStr | Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision |
title_full_unstemmed | Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision |
title_short | Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision |
title_sort | versatile on chip polarization sensitive detection system for optical communication and artificial vision |
url | https://doi.org/10.1038/s41377-025-01744-x |
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