Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs
The objective of this study is to optimize the trade-off between threshold voltage (V _TH ) and maximum drain current (I _D,max ) in recessed gate AlGaN/GaN metal insulator semiconductor high electron mobility transistor (MISHEMT) using atomic layer etching (ALE) technology, with technical computer-...
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IOP Publishing
2025-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/adb08f |
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| author | An-Chen Liu Hsin-Chu Chen Po-Tsung Tu Yan-Lin Chen Yan-Chieh Chen Po-Chun Yeh Chih-I Wu Shu-Tong Chang Tsung-Sheng Kao Hao-Chung Kuo |
| author_facet | An-Chen Liu Hsin-Chu Chen Po-Tsung Tu Yan-Lin Chen Yan-Chieh Chen Po-Chun Yeh Chih-I Wu Shu-Tong Chang Tsung-Sheng Kao Hao-Chung Kuo |
| author_sort | An-Chen Liu |
| collection | DOAJ |
| description | The objective of this study is to optimize the trade-off between threshold voltage (V _TH ) and maximum drain current (I _D,max ) in recessed gate AlGaN/GaN metal insulator semiconductor high electron mobility transistor (MISHEMT) using atomic layer etching (ALE) technology, with technical computer-aided design (TCAD) simulations assisting in the analysis of the underlying mechanisms to demonstrate the high performance and reliability of GaN-based power application. A normally-off recessed gate MISHEMT with varying AlGaN remaining thickness (2 nm, 3 nm, and 5 nm) was fabricated using the ALE process, ensuring precise etch depth and minimal surface damage. The device with a 5 nm AlGaN remaining thickness exhibited excellent performance, with an I _D,max current of 347 mA mm ^−1 , a V _TH of +2.6 V, and a breakdown voltage (BV) of 830 V, compared to the AlGaN barrier with remaining thicknesses of 3 nm and 2 nm, which only reached 120 V and 75 V, respectively. The different recessed gate AlGaN remaining electric field distribution results were verified according to TCAD simulations. This is attributed to the hot electrons effect under the action of the high electric field to promote electrons to overcome potential energy barriers that are injected into a buffer, barrier, or insulating layers and trapped there, degrading off-state BV capability. |
| format | Article |
| id | doaj-art-e891303afd7e48ff9c8aa9d712da453f |
| institution | Kabale University |
| issn | 2053-1591 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj-art-e891303afd7e48ff9c8aa9d712da453f2025-02-11T14:15:11ZengIOP PublishingMaterials Research Express2053-15912025-01-0112202590110.1088/2053-1591/adb08fCharacterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTsAn-Chen Liu0https://orcid.org/0009-0003-7706-3659Hsin-Chu Chen1https://orcid.org/0009-0003-4698-4842Po-Tsung Tu2Yan-Lin Chen3Yan-Chieh Chen4https://orcid.org/0009-0005-4442-0773Po-Chun Yeh5Chih-I Wu6https://orcid.org/0000-0003-3613-7511Shu-Tong Chang7https://orcid.org/0000-0001-6132-8294Tsung-Sheng Kao8Hao-Chung Kuo9https://orcid.org/0000-0002-9373-4649Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University , Hsinchu, TaiwanInstitute of Advanced Semiconductor Packaging and Testing, National Sun Yat-sen University , Kaohsiung, Taiwan; Institute of Innovative Semiconductor Manufacturing, National Sun Yat-sen University , Kaohsiung, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University , Hsinchu, Taiwan; Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute , Hsinchu, TaiwanMaster Program in Semiconductor and Green Technology, National Chung Hsing University , Taichung, TaiwanInstitute of Advanced Semiconductor Packaging and Testing, National Sun Yat-sen University , Kaohsiung, TaiwanElectronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute , Hsinchu, TaiwanElectronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute , Hsinchu, Taiwan; Graduate Institute of Photonics and Optoelectronic and Department of Electrical Engineering, National Taiwan University , Taipei, TaiwanMaster Program in Semiconductor and Green Technology, National Chung Hsing University , Taichung, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University , Hsinchu, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University , Hsinchu, Taiwan; Semiconductor Research Center, Hon Hai Research Institute , Taipei, TaiwanThe objective of this study is to optimize the trade-off between threshold voltage (V _TH ) and maximum drain current (I _D,max ) in recessed gate AlGaN/GaN metal insulator semiconductor high electron mobility transistor (MISHEMT) using atomic layer etching (ALE) technology, with technical computer-aided design (TCAD) simulations assisting in the analysis of the underlying mechanisms to demonstrate the high performance and reliability of GaN-based power application. A normally-off recessed gate MISHEMT with varying AlGaN remaining thickness (2 nm, 3 nm, and 5 nm) was fabricated using the ALE process, ensuring precise etch depth and minimal surface damage. The device with a 5 nm AlGaN remaining thickness exhibited excellent performance, with an I _D,max current of 347 mA mm ^−1 , a V _TH of +2.6 V, and a breakdown voltage (BV) of 830 V, compared to the AlGaN barrier with remaining thicknesses of 3 nm and 2 nm, which only reached 120 V and 75 V, respectively. The different recessed gate AlGaN remaining electric field distribution results were verified according to TCAD simulations. This is attributed to the hot electrons effect under the action of the high electric field to promote electrons to overcome potential energy barriers that are injected into a buffer, barrier, or insulating layers and trapped there, degrading off-state BV capability.https://doi.org/10.1088/2053-1591/adb08frecessed gate structurenormally-off MISHEMTTCAD simulationALE processvariation of AlGaN remaining thickness |
| spellingShingle | An-Chen Liu Hsin-Chu Chen Po-Tsung Tu Yan-Lin Chen Yan-Chieh Chen Po-Chun Yeh Chih-I Wu Shu-Tong Chang Tsung-Sheng Kao Hao-Chung Kuo Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs Materials Research Express recessed gate structure normally-off MISHEMT TCAD simulation ALE process variation of AlGaN remaining thickness |
| title | Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs |
| title_full | Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs |
| title_fullStr | Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs |
| title_full_unstemmed | Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs |
| title_short | Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs |
| title_sort | characterization and simulation of algan barrier structure effects in normally off recessed gate algan gan mishemts |
| topic | recessed gate structure normally-off MISHEMT TCAD simulation ALE process variation of AlGaN remaining thickness |
| url | https://doi.org/10.1088/2053-1591/adb08f |
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