Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknesses

Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknesses

The charge trapping phenomenon in the SiO2 layer of Si/SiO2 substrates during the electron beam deposition of CaF2 thin films of varying thicknesses (50–277 nm) was studied. Photoelectron emission (PE) spectroscopy was employed to analyze electron trapping mechanisms induced by the deposition proces...

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Bibliographic Details
Main Authors: Marina Romanova, Sergii Chertopalov, Yuri Dekhtyar, Ladislav Fekete, Ján Lančok, Michal Novotný, Petr Pokorný, Anatoli I. Popov, Hermanis Sorokins, Aleksandr Vilken
Format: Article
Language:English
Published: Elsevier 2025-02-01
Series:Optical Materials: X
Subjects:
Calcium fluoride
Silicon dioxide
Electron beam deposition
Charge trapping
Electron irradiation
Photoelectron emission
Online Access:http://www.sciencedirect.com/science/article/pii/S2590147825000026
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