Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknesses
The charge trapping phenomenon in the SiO2 layer of Si/SiO2 substrates during the electron beam deposition of CaF2 thin films of varying thicknesses (50–277 nm) was studied. Photoelectron emission (PE) spectroscopy was employed to analyze electron trapping mechanisms induced by the deposition proces...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-02-01
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| Series: | Optical Materials: X |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590147825000026 |
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