Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer

Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer

The AlGaN materials system has been extensively studied in order to improve the efficiency of UV‐B and UV‐C light‐emitting diodes (LEDs). While progress has been made, significant challenges remain at shorter wavelengths. Most notably, increased Al composition for shorter‐wavelength operation result...

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Main Authors: Andre Perepeliuc, Rajat Gujrati, Phuong Vuong, Vishnu Ottapilakkal, Thi May Tran, Mohamed Bouras, Ali Kassem, Ashutosh Srivastava, Tarik Moudakir, Gilles Patriarche, Paul Voss, Suresh Sundaram, Jean Paul Salvestrini, Abdallah Ougazzaden
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Photonics Research
Subjects:
2D/3D heterojunction
hole injection layer
p‐doped hexagonal boron nitride
UV light‐emitting diodes
Online Access:https://doi.org/10.1002/adpr.202400092
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https://doi.org/10.1002/adpr.202400092

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