Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer
The AlGaN materials system has been extensively studied in order to improve the efficiency of UV‐B and UV‐C light‐emitting diodes (LEDs). While progress has been made, significant challenges remain at shorter wavelengths. Most notably, increased Al composition for shorter‐wavelength operation result...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-02-01
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| Series: | Advanced Photonics Research |
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| Online Access: | https://doi.org/10.1002/adpr.202400092 |
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| author | Andre Perepeliuc Rajat Gujrati Phuong Vuong Vishnu Ottapilakkal Thi May Tran Mohamed Bouras Ali Kassem Ashutosh Srivastava Tarik Moudakir Gilles Patriarche Paul Voss Suresh Sundaram Jean Paul Salvestrini Abdallah Ougazzaden |
| author_facet | Andre Perepeliuc Rajat Gujrati Phuong Vuong Vishnu Ottapilakkal Thi May Tran Mohamed Bouras Ali Kassem Ashutosh Srivastava Tarik Moudakir Gilles Patriarche Paul Voss Suresh Sundaram Jean Paul Salvestrini Abdallah Ougazzaden |
| author_sort | Andre Perepeliuc |
| collection | DOAJ |
| description | The AlGaN materials system has been extensively studied in order to improve the efficiency of UV‐B and UV‐C light‐emitting diodes (LEDs). While progress has been made, significant challenges remain at shorter wavelengths. Most notably, increased Al composition for shorter‐wavelength operation results in increased activation energy of Mg dopants, resulting in low p‐doping. Although p‐doped h‐BN, with a bandgap of 5.9 eV, has been proposed as a potential replacement of p‐doped AlGaN, there have not been demonstrations of LEDs fabricated from p‐doped h‐BN/AlGaN heterostructures. Such unique heterostructures combine 2D p‐doped h‐BN materials with 3D AlGaN materials. Herein, fabrication and characterization of p‐doped h‐BN/AlGaN multiple quantum wells (MQWs)/n‐AlGaN LEDs, demonstrating emission of light at 290 nm corresponding to the AlGaN MQWs, with weaker emission at 262 nm corresponding to the AlGaN barrier, are reported. These results conclusively show hole injection through p‐doped h‐BN into AlGaN and provide a proof of concept that p‐doped h‐BN can be an alternative hole injection layer for UV LEDs. |
| format | Article |
| id | doaj-art-3c1db543c47143f0b2c3d282399df1c1 |
| institution | Kabale University |
| issn | 2699-9293 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Photonics Research |
| spelling | doaj-art-3c1db543c47143f0b2c3d282399df1c12025-02-06T08:56:40ZengWiley-VCHAdvanced Photonics Research2699-92932025-02-0162n/an/a10.1002/adpr.202400092Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection LayerAndre Perepeliuc0Rajat Gujrati1Phuong Vuong2Vishnu Ottapilakkal3Thi May Tran4Mohamed Bouras5Ali Kassem6Ashutosh Srivastava7Tarik Moudakir8Gilles Patriarche9Paul Voss10Suresh Sundaram11Jean Paul Salvestrini12Abdallah Ougazzaden13CNRS IRL 2958 GT‐CNRS 2 Rue Marconi 57070 Metz FranceCNRS IRL 2958 GT‐CNRS 2 Rue Marconi 57070 Metz FranceGeorgia Tech – Europe 2 Rue Marconi 57070 Metz FranceCNRS IRL 2958 GT‐CNRS 2 Rue Marconi 57070 Metz FranceCNRS IRL 2958 GT‐CNRS 2 Rue Marconi 57070 Metz FranceCNRS IRL 2958 GT‐CNRS 2 Rue Marconi 57070 Metz FranceCNRS IRL 2958 GT‐CNRS 2 Rue Marconi 57070 Metz FranceGeorgia Tech – Europe 2 Rue Marconi 57070 Metz FranceInstitut Lafayette 3 rue Marconi 57070 Metz FranceCentre de Nanosciences et de Nanotechnologies Université Paris‐Saclay, C2N ‐ Site de Marcoussis Route de Nozay F‐91460 Marcoussis FranceGeorgia Institute of Technology School of Electrical and Computer Engineering Atlanta USACNRS IRL 2958 GT‐CNRS 2 Rue Marconi 57070 Metz FranceCNRS IRL 2958 GT‐CNRS 2 Rue Marconi 57070 Metz FranceCNRS IRL 2958 GT‐CNRS 2 Rue Marconi 57070 Metz FranceThe AlGaN materials system has been extensively studied in order to improve the efficiency of UV‐B and UV‐C light‐emitting diodes (LEDs). While progress has been made, significant challenges remain at shorter wavelengths. Most notably, increased Al composition for shorter‐wavelength operation results in increased activation energy of Mg dopants, resulting in low p‐doping. Although p‐doped h‐BN, with a bandgap of 5.9 eV, has been proposed as a potential replacement of p‐doped AlGaN, there have not been demonstrations of LEDs fabricated from p‐doped h‐BN/AlGaN heterostructures. Such unique heterostructures combine 2D p‐doped h‐BN materials with 3D AlGaN materials. Herein, fabrication and characterization of p‐doped h‐BN/AlGaN multiple quantum wells (MQWs)/n‐AlGaN LEDs, demonstrating emission of light at 290 nm corresponding to the AlGaN MQWs, with weaker emission at 262 nm corresponding to the AlGaN barrier, are reported. These results conclusively show hole injection through p‐doped h‐BN into AlGaN and provide a proof of concept that p‐doped h‐BN can be an alternative hole injection layer for UV LEDs.https://doi.org/10.1002/adpr.2024000922D/3D heterojunctionhole injection layerp‐doped hexagonal boron nitrideUV light‐emitting diodes |
| spellingShingle | Andre Perepeliuc Rajat Gujrati Phuong Vuong Vishnu Ottapilakkal Thi May Tran Mohamed Bouras Ali Kassem Ashutosh Srivastava Tarik Moudakir Gilles Patriarche Paul Voss Suresh Sundaram Jean Paul Salvestrini Abdallah Ougazzaden Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer Advanced Photonics Research 2D/3D heterojunction hole injection layer p‐doped hexagonal boron nitride UV light‐emitting diodes |
| title | Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer |
| title_full | Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer |
| title_fullStr | Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer |
| title_full_unstemmed | Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer |
| title_short | Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer |
| title_sort | novel 2d 3d heterojunction for uv light emitting diodes using hexagonal boron nitride as hole injection layer |
| topic | 2D/3D heterojunction hole injection layer p‐doped hexagonal boron nitride UV light‐emitting diodes |
| url | https://doi.org/10.1002/adpr.202400092 |
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