Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features
The structure BiFeO3/TiO2–NTs (BFOT) obtained using the atomic layer deposition. During the Anatase/Rutile phase transformation; there is a redistribution of Fe/Ti atoms, resulting in the formation of local inhomogeneities and charge trapping centres. Studies of the resistive switching effect showed...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2024-12-01
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| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/136067/download/pdf/ |
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