Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features
The structure BiFeO3/TiO2–NTs (BFOT) obtained using the atomic layer deposition. During the Anatase/Rutile phase transformation; there is a redistribution of Fe/Ti atoms, resulting in the formation of local inhomogeneities and charge trapping centres. Studies of the resistive switching effect showed...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2024-12-01
|
| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/136067/download/pdf/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1823859107820470272 |
|---|---|
| author | Shikhgasan Ramazanov Gaji Gajiev Daud Selimov Sadrudin Gadzhimuradov Sagim Suleymanov Ştefan Ţălu Robert S. Matos Henrique D. da Fonseca Filho |
| author_facet | Shikhgasan Ramazanov Gaji Gajiev Daud Selimov Sadrudin Gadzhimuradov Sagim Suleymanov Ştefan Ţălu Robert S. Matos Henrique D. da Fonseca Filho |
| author_sort | Shikhgasan Ramazanov |
| collection | DOAJ |
| description | The structure BiFeO3/TiO2–NTs (BFOT) obtained using the atomic layer deposition. During the Anatase/Rutile phase transformation; there is a redistribution of Fe/Ti atoms, resulting in the formation of local inhomogeneities and charge trapping centres. Studies of the resistive switching effect showed nonlinear current-voltage characteristics. The negative differential resistance probably arises from the oxide dielectric layer of BFO, thin regions of which participate in the tunneling process. The BFOT surface exhibits topographic variations with spatial patterns that conform to normality, and the distribution of topographic heights displays a quasi-normal behavior. The self-affine attributes of the BFOT film are validated by the exponential reduction in autocorrelation functions, and the Minkowski functionals underscore the intricate and irregular nature of the film's topographic patterns. |
| format | Article |
| id | doaj-art-6d7f47c4abb544d1b451049648d7f513 |
| institution | Kabale University |
| issn | 2452-1779 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Pensoft Publishers |
| record_format | Article |
| series | Modern Electronic Materials |
| spelling | doaj-art-6d7f47c4abb544d1b451049648d7f5132025-02-11T08:30:08ZengPensoft PublishersModern Electronic Materials2452-17792024-12-0110420721610.3897/j.moem.10.4.136067136067Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic featuresShikhgasan Ramazanov0Gaji Gajiev1Daud Selimov2Sadrudin Gadzhimuradov3Sagim Suleymanov4Ştefan Ţălu5Robert S. Matos6Henrique D. da Fonseca Filho7Amirkhanov Institute of Physics, Dagestan Federal Research Center, Russian Academy of SciencesAmirkhanov Institute of Physics, Dagestan Federal Research Center, Russian Academy of SciencesAmirkhanov Institute of Physics, Dagestan Federal Research Center, Russian Academy of SciencesAmirkhanov Institute of Physics, Dagestan Federal Research Center, Russian Academy of SciencesAmirkhanov Institute of Physics, Dagestan Federal Research Center, Russian Academy of SciencesThe Technical University of Cluj-Napoca, The Directorate of Research, Development and Innovation Management (DMCDI)Amazonian Materials Group, Physics Department, Federal University of Amapá-UNIFAPLaboratory of Synthesis of Nanomaterials and Nanoscopy, Physics Department, Federal University of Amazonas-UFAMThe structure BiFeO3/TiO2–NTs (BFOT) obtained using the atomic layer deposition. During the Anatase/Rutile phase transformation; there is a redistribution of Fe/Ti atoms, resulting in the formation of local inhomogeneities and charge trapping centres. Studies of the resistive switching effect showed nonlinear current-voltage characteristics. The negative differential resistance probably arises from the oxide dielectric layer of BFO, thin regions of which participate in the tunneling process. The BFOT surface exhibits topographic variations with spatial patterns that conform to normality, and the distribution of topographic heights displays a quasi-normal behavior. The self-affine attributes of the BFOT film are validated by the exponential reduction in autocorrelation functions, and the Minkowski functionals underscore the intricate and irregular nature of the film's topographic patterns.https://moem.pensoft.net/article/136067/download/pdf/ |
| spellingShingle | Shikhgasan Ramazanov Gaji Gajiev Daud Selimov Sadrudin Gadzhimuradov Sagim Suleymanov Ştefan Ţălu Robert S. Matos Henrique D. da Fonseca Filho Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features Modern Electronic Materials |
| title | Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features |
| title_full | Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features |
| title_fullStr | Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features |
| title_full_unstemmed | Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features |
| title_short | Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features |
| title_sort | additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching topographic features |
| url | https://moem.pensoft.net/article/136067/download/pdf/ |
| work_keys_str_mv | AT shikhgasanramazanov additivecontributionofmultiferroicfilmandsemiconductorsubstratefromnanotubearraytoresistiveswitchingtopographicfeatures AT gajigajiev additivecontributionofmultiferroicfilmandsemiconductorsubstratefromnanotubearraytoresistiveswitchingtopographicfeatures AT daudselimov additivecontributionofmultiferroicfilmandsemiconductorsubstratefromnanotubearraytoresistiveswitchingtopographicfeatures AT sadrudingadzhimuradov additivecontributionofmultiferroicfilmandsemiconductorsubstratefromnanotubearraytoresistiveswitchingtopographicfeatures AT sagimsuleymanov additivecontributionofmultiferroicfilmandsemiconductorsubstratefromnanotubearraytoresistiveswitchingtopographicfeatures AT stefantalu additivecontributionofmultiferroicfilmandsemiconductorsubstratefromnanotubearraytoresistiveswitchingtopographicfeatures AT robertsmatos additivecontributionofmultiferroicfilmandsemiconductorsubstratefromnanotubearraytoresistiveswitchingtopographicfeatures AT henriqueddafonsecafilho additivecontributionofmultiferroicfilmandsemiconductorsubstratefromnanotubearraytoresistiveswitchingtopographicfeatures |